Vertical and horizontal PECVD Furnaces for use in laboratory research and industrial processes with outstanding capacity, efficiency and flexibility. Click Now! The design of Plasma Enhanced.
Slidable Multi Zone PECVD Tube Furnace Place of Origin: Henan, China Tube material: quartz Classification: Laboratory Heating Equipments certificate: ce Max. temperature: 1200C.
Model： PT-1200PECVD. Description： PECVD furnace (Plasma Enhanced Chemical Vapor Deposition), which consists of 500W RF plasma source, 2" or 3.14" O.D optional split tube.
Products. Biomass pyrolysis unit. PT-T1200 PECVD Tube Furnace System. Custom CVD Tube Furnace System. High Precision Control Vibration Feeding Rotary Inclined Tube Furnace. Lab Scale Elastomeric Material Pyrolysis Furnace with Hopper and Impingers. PT-T1200-PGEP ultrasonic spray furnace system. 1200C Tube furnace with steam generator.
Laboratory CVD Furnace with water cooling flange and two gas way mixer CY-IT-2Z10V. CY-IT-2Z10V is a laboratory cvd furnaceposed by one 1200 tube furnace with water cooling.
PECVD-500A/PECVD-S-150A. CVD with sliding furnace for graphene production. Two Channels ALD Tube Furnace System. Roll to roll pecvd system for constant graphene film production. Large-diameter dynamic plasma assisted roll-to-roll graphene preparation equipment. Plasma Enhanced Roll to Roll Chemical Vapor Deposition System for graphene production.
Descriptions of PECVD furnace: PCVED by microwave or radio frequency make gas ionization containing film the constituent atoms,in a local plasma formation,and plasma chemical activity is very strong,is easy to react,sedimentary out the desired film on substrate,it widely used product high quality sio2 film,si3N4 film,diamond film,hard thin film,optical thin film and CNT etc.
Technical parameters of PECVD furnace : Tube furnace. · Input power: 208 – 240V AC, 1.2kW. · 1200°C Max. working temperature for < 60 minutes. · 1100°C Max for continuous heating. ·.
1200°C PE/CVD Furnace w/ RF Generator, Gas Mix & Pumping System. $5,990.00. 1400°C CVD Tube Furnace with Gas Mixing & Pumping System. $7,990.00. 1700°C CVD Tube Furnace.
The PlasmaPro 800 offers a flexible solution for Plasma Enhanced Chemical Vapour Deposition (PECVD) processes on large wafer batches and 300mm wafers, in a compact footprint, open-loading… PlasmaPro 800 PECVD.
Compact CVD system with 1200°C tube furnace 3 gas way float flow controller-CY-O1200-50IC-3F. 1700℃ hydrogen reduction CVD system with 2-channel float flowmeter to supply gas CY-T1700-100IC-2F-HP. PECVD Plasma enhanced chemical vapor deposition coating equipment. 1200℃ high-vacuum rapid annealing furnace.
PECVD-500A/PECVD-S-150A. CVD with sliding furnace for graphene production. Two Channels ALD Tube Furnace System. Roll to roll pecvd system for constant graphene film production..
Brief Introduction: PT-T1200 PECVD is a is PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of 500W RF power supply, splitable tube furnace with 200mm diameter quartz tube.
CVD Furnaces fo r Graphene & 2D Materials. Plasma Enhanced CVD Tube Furnaces (PECVD) ALD & Combination Furnace s. Mist CVD System. Rotatable Powder CVD furnace. HPCVD System. Tube Furnace with MFC. Microwave Plasma Furnaces (MPECVD) Tube.
Laboratory 1200 Dual Zones S lidable PECVD Tube Furnace (Optional Tube Dia) TMAX-DSP-1200PECVD is a dual zone slidable PE-CVD tube furnace system consists of RF plasma.
Plasma Enhanced Chemical Vapor Deposition (PECVD) Tube Furnace System used for material deposition, US $ 5500 - 19563 / Set, Laboratory Heating Equipments, kejia, KJ-OTF-1200X-4CLV-PE pecvd tube furnace.Source.
CVD Furnaces fo r Graphene & 2D Materials. Plasma Enhanced CVD Tube Furnaces (PECVD) ALD & Combination Furnace s. Mist CVD System. Rotatable Powder CVD furnace. HPCVD.
Tube furnace · Input power: 208 – 240V AC, 1.2kW · 1200 C Max. working temperature for < 60 minutes · 1100 C Max for continuous heating · High purity quartz tube 2"OD x 1.7"ID x 39.4" Length · 30 segments programmable.
2017/12/07 · Plasma enhanced chemical vapor deposition is an efficient way to grow nanowire deposit thin films.
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